TaHfC has a melting temperature 3990☌ and thermal conductivity 21 W/(m SiC has a melting temperature of 2,830☌, thermal conductivity of 120 W/(m.K), and thermal expansion coefficient of 4×10 −6/K. Refractory ceramic materials such as silicon carbide (SiC) and tantalum hafnium carbide (TaHfC) are potential candidates for future high temperature and high radiation environment ( Pierson, 1996). Therefore, breakthrough approaches on both material and manufacturing must address not only the current need in high temperature operation capability, toughness, durability, reusability, and cost, but also the near future need for space and nuclear operation against high neutron and radiation flux. However, at high temperature above 2000☌, the structures experience severe recrystallization and grain growth, which creates cracks and fatigue. Hot structure or high temperature structure/component is essential to next generation industries of steel, energy, semiconductor, and aerospace.
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